Diffusion joint of power semiconductor module materials using hydrogen-charge and its discharge

2015 Fiscal Year Final Research Report

• Project/Area Number: 24656190
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Power engineering/Power conversion/Electric machinery
• Research Institution: Yamaguchi University
• Principal Investigator: Murata Takuya 山口大学, 理工学研究科, 助教 (70263796)
• Project Period (FY): 2012-04-01 – 2016-03-31
• Keywords: 拡散接合 / 水素チャージ・ディスチャージ / パワー半導体モジュール / セラミックス / 熱応力緩和 / 塑性変形 / 電気インピーダンス

Outline of Final Research Achievements

Using a surface activated metal with hydrogen charging and its discharge, electronics materials for the power-semiconductor module were diffusion-jointed without high vacuum atmosphere, reducing the heat and electrical resistance at the joint interface. As a result, the hydrogen charging to the metal formed a joint interface in close contact and the joints were found to exhibit the mechanical properties of superior strength and flexibility. The thermal analysis data suggested that hydrogen charging removes the oxide film and introduces lattice strain, while its discharging realizes reducing atmosphere and succeeding plastic deformation, being essentially effective to relax the residual stress at ceramics and metal junction.

Free Research Field

材料物性、電子計測