2012 Fiscal Year Final Research Report
Fabrication of Nanoscale Devices and Circuits using DNA Origami Technology
| Project/Area Number |
24656201
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
ODA Shunri 東京工業大学, 量子ナノエレクトロニクス研究センター, 教授 (50126314)
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| Co-Investigator(Kenkyū-buntansha) |
KODERA Tetsuo 東京工業大学, 量子ナノエレクトロニクス, 助教 (00466856)
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| Project Period (FY) |
2012
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| Keywords | 薄膜 / 量子構造 |
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| Research Abstract |
DNA Origami technology is promising for the fabrication of nanoscale integrated devices, in which conventional lithography methods would face limitation. We studied formation of DNA Origami pattern on Si substrate and clarified that surface condition of Si substrate played a very important role. We found UV ozone treatment was effective to form DNA Origami pattern as designed. We also fabricated and characterized an integrated device of coupled quantum dots and an single electron transistor.
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