Study on fluorinated graphene devices to achieve high-speed and low-power consumption

2013 Fiscal Year Final Research Report

• Project/Area Number: 24656202
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Single-year Grants
• Research Field: Electronic materials/Electric materials
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: HATANO Mutsuko 東京工業大学, 理工学研究科, 教授 (00417007)
• Co-Investigator(Kenkyū-buntansha): IWASAKI Takayuki 東京工業大学, 大学院理工学研究科, 助教 (80454031)
• Project Period (FY): 2012-04-01 – 2014-03-31
• Keywords: グラフェン / 低消費電力デバイス / 化学修飾グラフェン

Research Abstract

Fluorinated graphene has the possibility to achieve high-speed and low-power consumption devices. We propose a highly controlled fluorination method utilizing fluorine radicals in Ar/F2 plasma. Onset of transition from insulating to metallic conduction is observed in dilute fluorinated graphene. Highly fluorinated graphene shows electron-hole asymmetry in transport properties and local resistivity maximum at the hole conduction region, which are presumably caused by the existence of resonant fluorine impurities. Drastic change of the asymmetric feature occurs after removing fluorine atoms and creating structural defects by thermal annealing. These results suggest that the type of impurities or defects in graphene is detectable by examining asymmetry in transport properties. Moreover, fluorinated graphene FETs with ionic liquid gating were fabricated and lower voltage operation and higher on/off ratio were confirmed.

Research Products

• [Journal Article] Asymmetric transport property of fluorinated grapheme (2013)
  • Author(s): Kosuke Tahara, Taka uki Iwasaki, Satoko Furuyama, Akih ro Matsutani, Mutsuko Hatano
  • Journal Title: Applied Physics Letters Volume: 103 Pages: 143106-1, 4
  • DOI: 10.1063/1.4823798
  • Peer Reviewed
• [Journal Article] Fluorination of Graphene by Reactive Ion Etching System Using Ar/F2 Plasma (2013)
  • Author(s): Akihiro Matsutani, Kosuke Tahara, Takayuki Iwasaki, Mutsuko Hatano
  • Journal Title: Japanese Journal of Applied Physics Volume: 52 Pages: 06GD11-1, 3
  • DOI: 10.7567/JJAP.52.06GD11
  • Peer Reviewed
• [Journal Article] Effect of radical Mutsuko Hatano fluorination on mono- and bi-layer graphene in Ar/F2 plasma (2012)
  • Author(s): Kosuke Tahara, Takayuki Iwasaki, Akihiro Matsutani
  • Journal Title: Applied Physics Letters Volume: 101 Pages: 163105
  • DOI: 10.1063/1.4760268
  • Peer Reviewed
• [Presentation] 横型フッ化グラフェン‐グラフェンヘテロ構造の作製 (2014)
  • Author(s): 成木航, 田原康佐, 岩崎孝之, 古山聡子, 松谷晃宏, 波多野睦子
  • Organizer: 第61回応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学相模原キャンパス(神奈川県)
  • Year and Date: 20140317-20
• [Presentation] フッ化グラフェンの磁気抵抗効果 (2013)
  • Author(s): 田原康佐, 岩崎孝之, 松谷晃宏, 山口智弘, 石橋幸治, 波多野睦子
  • Organizer: 第74回応用物理学会秋季学術講演会
  • Place of Presentation: 同志社大学京田辺キャンパス(京都府)
  • Year and Date: 20130916-20
• [Presentation] Low Temperature Transport Properties of Fluorinated Graphene FET Controlled by Ionic Liquid Gating (2013)
  • Author(s): Satoko Furuyama, Kosuke Tahara, Takayuki Iwasaki, Akihiro Matsutani, Mutsuko Hatano
  • Organizer: 2013 JSAP-MRS Joint Symposia
  • Place of Presentation: 同志社大学京田辺キャンパス(京都府)
  • Year and Date: 20130916-20
• [Presentation] Asymmetric transport properties in fluorinated grapheme (2013)
  • Author(s): Kosuke Tahara, Takayuki Iwasaki, Satoko Furuyama, Akihiro Matsutani, Mutsuko Hatano
  • Organizer: 2013 JSAP-MRS Joint Symposia
  • Place of Presentation: 同志社大学京田辺キャンパス(京都府)
  • Year and Date: 20130916-20
• [Presentation] Magnetotransport properties of fluorinated grapheme (2013)
  • Author(s): Kosuke Tahara, Takayuki Iwasaki, Akihiro Matsutani, Tomohiro Yamaguchi, Koji Ishibashi, Mutsuko Hatano
  • Organizer: RPGR2013
  • Place of Presentation: 東京工業大学大岡山キャンパス(東京都)
  • Year and Date: 20130909-13
• [Presentation] Monolayer diamond FETs consist of fluorinated graphene channel (2013)
  • Author(s): Mutsuko Hatano
  • Organizer: International Conference on Semiconductor technology for ultra large scale integrated circuits and thin film transistors
  • Place of Presentation: Villard-de-Lans(フランス(グルノーブル)
  • Year and Date: 20130707-12
  • Invited
• [Presentation] Crystal and Twisted Graphene Layers on Metal Films (2013)
  • Author(s): Takayuki Iwasaki
  • Organizer: Collaborative Conference on Materials Research
  • Place of Presentation: Ramanda Plaza (韓国)
  • Year and Date: 20130624-28
  • Invited
• [Presentation] Characteristics of Fluorinated Graphene Field Effect Transistors (2013)
  • Author(s): Kosuke Tahara, Takayuki Iwasaki, Satoko Furuyama, Akihiro Matsutani, Mutsuko Hatano
  • Organizer: Compound Semiconductor Week 2013
  • Place of Presentation: Kobe Convention Center(兵庫県)
  • Year and Date: 20130519-23
• [Presentation] フッ化グラフェンFETの温度特性 (2013)
  • Author(s): 田原康佐, 岩崎孝之, 古山聡子, 松谷晃宏, 波多野睦子
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学(神奈川県)
  • Year and Date: 20130327-30
• [Presentation] イオン液体ゲートを用いたフッ化グラフェン電界効果トランジスタ (2013)
  • Author(s): 古山聡子, 田原康佐, 岩崎孝之, 松谷晃宏, 波多野睦子
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学(神奈川県)
  • Year and Date: 20130327-30
• [Presentation] Fluorinated Graphene FETs Controlled by Ionic Liquids Gate (2013)
  • Author(s): Satoko Furuyama, Kosuke Tahara, Takayuki Iwasaki, Akihiro Matsutani, Mutsuko Hatano
  • Organizer: The 9th International Thin-Film Transistor Conference
  • Place of Presentation: 東京大学(東京都)
  • Year and Date: 20130327-30
• [Presentation] Carrier Transport Properties of Fluorinated Graphene (2013)
  • Author(s): Kosuke Tahara, Takayuki Iwasaki, Satoko Furuyama, Akihiro Matsutani, Mutsuko Hatano
  • Organizer: IEEE EDS WIMNACT-37, Future Trend of Nanodevices and Photonic
  • Place of Presentation: 東京工業大学(東京都)
  • Year and Date: 2013-02-18
• [Presentation] Fluorination of Mono- and Bi-layer Graphene by Ar/F2 Plasma (2012)
  • Author(s): Kosuke Tahara, Takayuki Iwasaki, Akihiro Matsutani, Satoko Furuyama, Yasuhide Ohno, Kazuhiko Matsumoto, Mutsuko Hatano
  • Organizer: 2012 MRS Fall Meeting
  • Place of Presentation: Hynes Convention Center(アメリカ)
  • Year and Date: 20121125-30
• [Presentation] Fluorination Process of Graphene using Ar/F2 Plasma (2012)
  • Author(s): Akihiro Matsutani, Kosuke Tahara, Takayuki Iwasaki, Mutsuko Hatano
  • Organizer: MNC 2012, 25th International Microprocesses and Nanotechnology Conference
  • Place of Presentation: 神戸メリケンパークオリエンタルホテル(兵庫県)
  • Year and Date: 20121030-1102
• [Presentation] フッ化グラフェンのキャリア輸送特性 (2012)
  • Author(s): 田原康佐, 岩崎孝之, 松谷晃宏, 古山聡子, 大野恭秀, 松本和彦, 波多野睦子
  • Organizer: 第73回応用物理学会秋季学術講演会
  • Place of Presentation: 松山大学(愛媛県)
  • Year and Date: 20120911-14