Mechanism of leakage current of ferroelectric thin films based on internal potential

2014 Fiscal Year Final Research Report

• Project/Area Number: 24656372
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Inorganic materials/Physical properties
• Research Institution: Tohoku University
• Principal Investigator: KIGUCHI Takanori 東北大学, 金属材料研究所, 准教授 (70311660)
• Co-Investigator(Kenkyū-buntansha): SATO Kazuhisa 東北大学, 金属材料研究所, 准教授 (70314424)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: 強誘電体 / 組織 / マルチフェロイックス / リラクサー / 電子顕微鏡 / 出射波動場 / 波面再構築 / 内部ポテンシャル

Outline of Final Research Achievements

This study was investigated the effect of processing conditions of BiFeO3 and Pb(Mg1/3Nb2/3)O3 thin films on their microstructure using electron microscopies, the transmission electron microscopy (TEM) and the high-angle annular dark field-scanning transmission electron microscopy (HAADF-STEM). The mechanism of leakage current was also investigated from the point of microstructure. It has been attempted that the analysis of the average internal potential in these thin films using the wave function reconstruction of the focal series of HRTEM images in order to elucidate the electronic structure in these thin films.

Free Research Field

無機材料・物性