• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to project page

2013 Fiscal Year Final Research Report

Control of Interfacial Strain between Wide-Bandgap Semiconductor and Electrode to Improve Interfacial Electrical Conductance

Research Project

  • PDF
Project/Area Number 24656444
Research Category

Grant-in-Aid for Challenging Exploratory Research

Allocation TypeSingle-year Grants
Research Field Material processing/treatments
Research InstitutionOsaka University

Principal Investigator

MAEDA Masakatsu  大阪大学, 接合科学研究所, 助教 (00263327)

Co-Investigator(Kenkyū-buntansha) TAKAHASHI Yasuo  大阪大学, 接合科学研究所, 教授 (80144434)
Project Period (FY) 2012-04-01 – 2014-03-31
Keywordsひずみ / 窒化ガリウム / 電極/基板界面 / 界面電気伝導特性
Research Abstract

The present study aims to clarify the effect of strain induced in the GaN substrate on the electrical conductance of the contact interface and to demonstrate a technology to improve the conductance by controlling the strain in the GaN substrate. Compressive strain is induced in the GaN substrate in the vicinity of the contact electrode by formation of the Ti-based contact electrode. The interface with a larger compressive strain shows a lower conductance. Deposition of the same film as the electrode on the backside of the GaN substrate compensates the strain and improves the conductance.

  • Research Products

    (7 results)

All 2013 Other

All Journal Article (7 results) (of which Peer Reviewed: 7 results)

  • [Journal Article] Interfacial nanostructure and electrical properties of Ti3SiC2 contact on p-type gallium nitride2013

    • Author(s)
      Aiman b. M. H., M. Maeda and Y. Takahashi
    • Journal Title

      Mater. Trans

      Volume: Vol. 54 Pages: 890-894

    • Peer Reviewed
  • [Journal Article] Effect of argon ion irradiation on ohmic contact formation on n-type gallium nitride2013

    • Author(s)
      K. Kimura, M. Maeda and Y. Takahashi
    • Journal Title

      Mater. Trans

      Volume: Vol. 54 Pages: 895-898

    • Peer Reviewed
  • [Journal Article] Control of interfacial properties in power electronic devices2013

    • Author(s)
      M. Maeda and Y. Takahashi
    • Journal Title

      Int. J. Nanotechnol

      Volume: Vol. 10 Pages: 89-99

    • Peer Reviewed
  • [Journal Article] Effect of crystal orientation on ohmic contact formation for n-type gallium nitride

    • Author(s)
      K. Kimura, M. Maeda and Y. Takahashi
    • Journal Title

      IOP Conf. Ser. : Mater. Sci. Eng

      Volume: (in press)

    • Peer Reviewed
  • [Journal Article] Nucleation and growth of Ti3SiC2 on SiC by interfacial reaction

    • Author(s)
      K. Ideguchi, M. Maeda and Y. Takahashi
    • Journal Title

      IOP Conf. Ser. : Mater. Sci. Eng

      Volume: (in press)

    • Peer Reviewed
  • [Journal Article] Nickeltitaniu based contact for n-type silicon carbide to combine high ohmic conductivity and mechanical properties

    • Author(s)
      M. Maeda, M. Sano and Y. Takahashi
    • Journal Title

      IOP Conf. Ser. : Mater. Sci. Eng

      Volume: (in press)

    • Peer Reviewed
  • [Journal Article] Electrical properties of the interface between p-GaN and contact materials

    • Author(s)
      Aiman b. M. H., M. Maeda and Y. Takahashi
    • Journal Title

      IOP Conf. Ser. : Mater. Sci. Eng

      Volume: (in press)

    • Peer Reviewed

URL: 

Published: 2015-06-25  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi