2013 Fiscal Year Final Research Report
Improvement of mobility for CVD graphene by removing catalytic metal
| Project/Area Number |
24656456
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Single-year Grants |
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| Research Field |
Metal making engineering
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| Research Institution | The University of Tokyo |
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Principal Investigator |
NAGASHIO Kosuke 東京大学, 工学(系)研究科(研究院), 准教授 (20373441)
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| Project Period (FY) |
2012-04-01 – 2014-03-31
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| Keywords | グラフェン / CVD / 単結晶 / 高移動度 |
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| Research Abstract |
CVD growth of graphene is simple and effective way for graphene synthesis. In this study, mica(001) substrate was used to obtain the single crystal graphene, instead of Al2O3 and MgO. The Cu deposition of 800 nm in thickness was carried out on mica. After the H2 annealing at 1000 C, the surface roughness was reduced to 0.5 nm (RMS), which indicates very smooth surface for graphene growth. Based on the precise control of H2/Ar gas flow, high quality graphene could be grown on Cu. This was confirmed by Raman. The mobility of measured device was ~4500 cm2/Vs.
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