Electrical spin generation and its manipulation in semiconductor nanostructures

2014 Fiscal Year Final Research Report

• Project/Area Number: 24684019
• Research Category: Grant-in-Aid for Young Scientists (A)
• Allocation Type: Partial Multi-year Fund
• Research Field: Condensed matter physics I
• Research Institution: Tohoku University
• Principal Investigator: KOHDA Makoto 東北大学, 工学(系)研究科(研究院), 准教授 (00420000)
• Co-Investigator(Renkei-kenkyūsha): NITTA Junsaku 東北大学, 大学院工学研究科, 教授 (00393778)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: 半導体スピントロニクス / スピン軌道相互作用 / InGaAs / 量子ポイントコンタクト / スピン生成

Outline of Final Research Achievements

We demonstrated electrical spin injection with InGaAs based quantum point contact which holds strong spin orbit interaction. By applying side gates in the quantum point contact, we can induce not only one dimensional channel for electrons but also spatial change of effective magnetic fields induced by spin orbit interaction. This acts to spin dependent force for electron spin resulting in the spatial separation of up spin and down spin. We observed 0.5(2e^2/h) conductance plateau and, by applying external magnetic fields, we confirmed the spin polarized direction and spin polarization.

Free Research Field

スピントロニクス