Current-induced effects in a single metal-insulator domain wall

2014 Fiscal Year Final Research Report

• Project/Area Number: 24684024
• Research Category: Grant-in-Aid for Young Scientists (A)
• Allocation Type: Partial Multi-year Fund
• Research Field: Condensed matter physics II
• Research Institution: The University of Tokyo
• Principal Investigator: MORIYA Rai 東京大学, 生産技術研究所, 助教 (30548657)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: 強相関電子系 / 酸化物 / ナノ細線

Outline of Final Research Achievements

We explored the novel conduction phenomena in a single metal-insulator domain wall confined in oxide nanowire. Within the three-year project, we demonstrated following results. 1) Fabricate high quality single crystalline oxide nanowire using home built vapour transport growth system. 2) Stabilize a single metal-insulator domain wall in suspended nanowire structure. 3) Current-controlled motion of a single metal-insulator domain wall. These results open up new possibility to utilize metal-insulator domain wall for both fundamental science and technology.

Free Research Field

ナノ材料科学