2014 Fiscal Year Final Research Report
Probing STM-induced THz emission
| Project/Area Number |
24686006
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Partial Multi-year Fund |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | The University of Tokyo |
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Principal Investigator |
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Keywords | トンネル電流誘起発光 / テラヘルツ波 / 近接場顕微鏡 / エバネッセント波 |
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| Outline of Final Research Achievements |
In this study we intend to realize a microscopy technique of STM-induced THz emission. We have developed a room-temperature STM in our passive THz near-field microscope and tried to detect STM emission. We observed some near-field signals probably derived by tunnel current emission. However we could not confirm that the signal origin should be the STM emission because of large background noises. To solve the problem, we should develop a similar STM inside a low-temperature chamber. On the other hand, we have succeeded in fabricating 2-color CSIP detectors in THz region in GaAs/AlGaAs “three” quantum well crystals. This 2-coloer detector opens the door to further promote near-field spectroscopy in THz region.
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| Free Research Field |
加工計測学
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