2015 Fiscal Year Final Research Report
Development of group-III nitride double polar selective area growth process and fabrication of nanostructure device
| Project/Area Number |
24686014
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Partial Multi-year Fund |
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| Research Field |
Applied physics, general
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| Research Institution | Shizuoka University |
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Principal Investigator |
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| Project Period (FY) |
2012-04-01 – 2016-03-31
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| Keywords | 中性子検出 / 半導体検出器 / III族窒化物半導体 / エピタキシャル成長 / 放射線検出特性 |
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| Outline of Final Research Achievements |
In this research, the development of novel neutron detector using group-III nitride semiconductor is carried out. At first, we proposed GdGaN and BGaN as neutron detector material, because Ga atom and B atom have large neutron capture cross sectional area. In the case of GdGaN, fabrication of high quality GdGaN crystal was not achieved, because Gd source gases supply is difficult by low saturated vapor pressure of that. In the case of BGaN crystal growth, the fabrication of BGaN epitaxial layer is achieved, and BN mole fraction of BGaN was about 1%. When the radiation detection measurement using the BGaN Schottky diode was carried out, detection signal by capturing neutron was observed. This result indicate that our proposal is correctly. Moreover, we evaluated the characteristics of radiation detection by group-III nitride semiconductor, and we derived mobility lifetime products of GaN in radiation detection.
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| Free Research Field |
結晶工学
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