Atomic-scale flattening of Ge surfaces free from metallic contamination by a flat catalyst to enhance oxygen reduction reactions in water

2015 Fiscal Year Final Research Report

• Project/Area Number: 24686020
• Research Category: Grant-in-Aid for Young Scientists (A)
• Allocation Type: Partial Multi-year Fund
• Research Field: Production engineering/Processing studies
• Research Institution: Osaka University
• Principal Investigator: ARIMA KENTA 大阪大学, 工学(系)研究科(研究院), 准教授 (10324807)
• Project Period (FY): 2012-04-01 – 2016-03-31
• Keywords: エッチング / 半導体プロセス / 触媒反応 / グラフェン / 表面工学 / 超精密加工

Outline of Final Research Achievements

I am aiming at developing a surface creation process in water to　flatten　a Ge surface free from metallic contamination. In this research period, I have obtained the results shown below.
(1) I confirmed that nitrogen (N) atoms can be doped in graphene by a thermal treatment in a mixed NH3/Ar gas. (2) I performed electrochemical measurements. It was demonstrated that the catalytic activity of N-doped graphene to enhance O2 reduction reactions is in between those of Pt and a carbon bulk. (3) Graphene particles were deposited on a Ge surface, and this sample was immersed in water with dissolved O2 molecules. I found that a Ge surface around the deposited graphene particles was selectively etched. This is owing to the catalytic activity of graphene.
These results are important and essential to continue further experiments.

Free Research Field

表面科学