Current injection at the graphene/metal interface with the large difference in DOSs

2014 Fiscal Year Final Research Report

• Project/Area Number: 24686039
• Research Category: Grant-in-Aid for Young Scientists (A)
• Allocation Type: Partial Multi-year Fund
• Research Field: Electronic materials/Electric materials
• Research Institution: The University of Tokyo
• Principal Investigator: NAGASHIO Kosuke 東京大学, 工学(系)研究科(研究院), 准教授 (20373441)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: グラフェン / コンタクト抵抗 / 状態密度

Outline of Final Research Achievements

In order to reduce the contact resistance at the metal/graphene interface, it is important to increase the density of states in graphene. In this study, the density of states of graphene underneath a metal is estimated through a quantum capacitance measurement of the metal/graphene/SiO2/n+-Si contact structure. The density of states of graphene in the contact structure is correlated with the contact resistivity meas-ured using devices fabricated by the resist-free process.

Free Research Field

半導体デバイス工学