LD fabrication on semipolar GaN/Si by induced pressure InGaN growth and strain control

2014 Fiscal Year Final Research Report

• Project/Area Number: 24686041
• Research Category: Grant-in-Aid for Young Scientists (A)
• Allocation Type: Partial Multi-year Fund
• Research Field: Electronic materials/Electric materials
• Research Institution: Nagoya University
• Principal Investigator: HONDA YOSHIO 名古屋大学, 工学(系)研究科(研究院), 准教授 (60362274)
• Research Collaborator: KUSHIMOTO Maki
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: Si / InGaN / GaN / レーザ / 半極性面

Outline of Final Research Achievements

In this study, we focus on the fabrication of the LD from blue to green region, by using semipolar GaN which could eliminate the internal polarization(piezo polarization). We could get semipolar GaN on patterned Si substrate with stripe shape. GaN and InGaN was taken the large stress due to the difference of the thermal expansion coefficient. In this structure, it was tensile stress along the stripe direction, on the other hand, it was compressive perpendicular direction. We found that InGaN luminous polarization direction was controlled to c axis direction owing to this stress. We made the laser structure on this structure and measured the optical property under high optical excitation condition. As a result, we confirm the stimulate emission from edge of the sample.

Free Research Field

半導体工学