Realization of quantum well structure in bulk thermoelectric semiconductor by control of the formation of stacking fault in SiC

2014 Fiscal Year Final Research Report

• Project/Area Number: 24686078
• Research Category: Grant-in-Aid for Young Scientists (A)
• Allocation Type: Partial Multi-year Fund
• Research Field: Structural/Functional materials
• Research Institution: Nagoya University
• Principal Investigator: HARADA Shunta 名古屋大学, グリーンモビリティ連携研究センター, 助教 (30612460)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: 格子欠陥 / 量子井戸構造 / 熱電変換 / シリコンカーバイト

Outline of Final Research Achievements

Thermoelectric materials which convert heat energy to electric energy attract great attention due to the efficient use of limited energy sources. Recently, Drastic improvement in the thermoelectric properties were expected by the quantum well structures. In the present study, by controlling the stacking fault formation in SiC crystal, we attempted to form the quantum well structure in the bulk semiconductors.
By the addition of nitrogen in SiC, cubic-type stacking faults are introduced to the hexagonal SiC crystal. The stacking fault would be quantum-well because the band-gap energy of cubic SiC is smaller than that of hexagonal SiC.

Free Research Field

工学