2013 Fiscal Year Annual Research Report
有機分子半導体／金属強磁性体界面の電子状態制御による垂直磁気異方性の増大
| Project/Area Number |
24750120
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| Research Institution | Tohoku University |
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Principal Investigator |
張 憲民 東北大学, 原子分子材料科学高等研究機構, 助教 (60580347)
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| Keywords | 有機半導体 / 金属磁性体 / 磁気抵抗効果 / スピントロニクス / 電子状態 |
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| Research Abstract |
We fabricated organic spin valves using magnetite as a high efficiency electrode, and 8-hydroxyquinoline aluminum (Alq3) were employed as the spacer layers. Magnetoresistance ratios of around 6% were obtained in Alq3-based spin valves at room temperature, which is one of the highest magnetoresistance ratios in organic spin valves reported thus far. The spin-dependent transport behavior in these spin valves were discussed. The magnetoresistance effect was systemically investigated by varying the thickness of the Alq3 layer. The MR ratio monotonously decreased with increasing Alq3 layer thicknesses. Moreover, the temperature dependence of the magnetoresistance ratios Alq3-based spin valves were evaluated to gain insight into the spin-dependent transport behavior. The multiple-step tunneling processes likely resulted in a decrease in the MR ratios with increasing Alq3 layer thickness, which is differ to the for C60 based devices. This study provides a useful method in designing organic spin materials and devices operated at room temperature.
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