2013 Fiscal Year Final Research Report
Spin-injection using perpendicularly magnetized thin films
| Project/Area Number |
24760003
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Tohoku University |
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Principal Investigator |
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| Project Period (FY) |
2012-04-01 – 2014-03-31
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| Keywords | 垂直磁化薄膜 / MnGa |
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| Research Abstract |
It is desired that a spin-injector material with a high efficiency for developing semiconductor devices with multi-functionality. In this study, Mn-Ga films with high perpendicular magnetic anisotropy were investigated for depositing onto single crystal Si substrate. In addition, spin dependent transport property of the Mn-compounds was investigated, and it is discovered that tunneling spin polarization can be increased by optimizing the interface. A Mn-Ga film with an L1_0 ordered phase was also successfuly fabricated onto single crystalline Si(100) substrate.
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