Investigateion of electronic functions of transition metal oxynitrides

2013 Fiscal Year Final Research Report

• Project/Area Number: 24760005
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Applied materials science/Crystal engineering
• Research Institution: The University of Tokyo
• Principal Investigator: HIROSE Yasushi 東京大学, 理学(系)研究科(研究院), 助教 (50399557)
• Project Period (FY): 2012-04-01 – 2014-03-31
• Keywords: 酸窒化物 / 固体化学 / 薄膜 / 強誘電体 / 半導体 / 強磁性体

Research Abstract

High quality crystals of transition metal oxynitrides were synthesized in epitaxial thin film forms by nitrogen-plasma assisted pulsed laser deposition. As a result, (1) we found that perovskite SrTaO2N thin film grown under compressive epitaxial strain consisted of small ferroelectric domains and relaxor ferroelectric-like matrix region. DFT calculation suggested that these properties are related with trans- and cis- arrangement of oxygen and nitrogen in TaX6 octahedra, respectively. (2) We controlled the electrical conductivity of SrTaO2N and anatase TaON thin films from insulator to degenerated semiconductor by introducing anion vacancies as electron donor. (3) We succeeded in synthesizing ferromagnetic La0.75Sr0.25MnO3-xNx by solid phase epitaxy method with higher Curie temperature than than the oxide thin film. These results indicated that transition metal oxynitrides are a promissing materials for electronic or magnetic application.

Research Products

• [Journal Article] Heteroepitaxial growth of perovskite CaTaO_2N thin films by nitrogen plasma-assisted pulsed laser deposition (2014)
  • Author(s): Daichi Oka, Yasushi Hirose, Tomoteru Fukumura, and Tetsuya Hasegawa
  • Journal Title: Crystal Growth & Design Volume: 14 Pages: 87
  • DOI: 10.1021/cg401176j
  • Peer Reviewed
• [Journal Article] High-Mobility Electron Conduction in Oxynitride : Anatase TaON (2014)
  • Author(s): Atsushi Suzuki, Yasushi Hirose, Daichi Oka, Shoichiro Nakao, Tomoteru Fukumura, Satoshi Ishii, Kimikazu Sasa, Hiroyuki Matsuzaki, and Tetsuya Hasegawa
  • Journal Title: Chemistry of Materials Volume: 26 Pages: 976
  • DOI: 10.1021/cm402720d
  • Peer Reviewed
• [Presentation] (2014)
  • Author(s): 岡, 他
  • Organizer: 第61回応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学
  • Year and Date: 2014-03-18
• [Presentation] (2013)
  • Author(s): 鈴木, 他
  • Organizer: 第74回応用物理学会秋季学術講演会
  • Place of Presentation: 同志社大学
  • Year and Date: 2013-09-17
• [Presentation] (2013)
  • Author(s): A. Suzuki, et al.
  • Organizer: E-MRS 2013 Spring meeting
  • Place of Presentation: Strasbour
  • Year and Date: 2013-05-29
• [Presentation] (2013)
  • Author(s): D. Oka, et al.
  • Organizer: E-MRS 2013 Spring meeting
  • Place of Presentation: Strasbourg
  • Year and Date: 2013-05-27
• [Presentation] (2013)
  • Author(s): A. Suzuki, et al
  • Organizer: 8th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics
  • Year and Date: 2013-05-14
• [Presentation] (2013)
  • Author(s): D. Oka, et al.
  • Organizer: APS March Meeting
  • Place of Presentation: Baltimore
  • Year and Date: 2013-03-19
• [Presentation] (2012)
  • Author(s): 岡, 他
  • Organizer: APS March Meeting
  • Place of Presentation: 名古屋大学
  • Year and Date: 2012-09-19
• [Presentation] (2012)
  • Author(s): 鈴木, 他
  • Organizer: 日本セラミックス協会第25回秋季シンポジウム
  • Place of Presentation: 名古屋大学
  • Year and Date: 2012-09-19
• [Presentation] (2012)
  • Author(s): 岡, 他
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学
  • Year and Date: 2012-09-14
• [Presentation] (2012)
  • Author(s): 鈴木, 他
  • Organizer: 012年秋季第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学
  • Year and Date: 2012-09-13
• [Presentation] (2012)
  • Author(s): Y. Hirose, et al.
  • Organizer: International Conference of Young Researchers on Advanced Materials
  • Place of Presentation: Singapore
  • Year and Date: 2012-07-06
  • Invited
• [Patent(Industrial Property Rights)] 導電体基板の製造方法、導電体基板、発光素子、電子機器、光電変換素子及び太陽電池パネル (2013)
  • Inventor(s): 廣瀬靖、長谷川哲也、鈴木温
  • Industrial Property Rights Holder: 公益財団法人神奈川科学技術アカデミー
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 特願2013-036448
  • Filing Date: 2013-02-26