Study of electronic structure of GaMnAs with spin-BEEM

2014 Fiscal Year Final Research Report

• Project/Area Number: 24760006
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: KAKU Shigeru 東京工業大学, 理工学研究科, 助教 (80583137)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: スピントロニクス / 希薄磁性半導体 / プローブ顕微鏡 / ナノ

Outline of Final Research Achievements

In order to clarify the mechanism of ferromagnetism of diluted magnetic semiconductor, we tried to measure the electronic structure of GaMnAs which is prototype ferromagnetic semiconductor by the microscopic method such as STM and BEEM. We developed high-resolution BEEM system. I could measure the subtle signal which shows the difference of 1ML quantum well width. Furthermore, the most suitable super-lattice structure and crystal growth method had been investigated.

Free Research Field

スピントロニクス