Control of organic semiconductor layer using Moire surface potential distribution of graphene

2014 Fiscal Year Final Research Report

• Project/Area Number: 24760023
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: University of Tsukuba
• Principal Investigator: YAMADA Yoichi 筑波大学, 数理物質系, 講師 (20435598)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: grapehe / モアレ / 有機半導体 / アルカリドーピング

Outline of Final Research Achievements

We aimed electronic and structural controll of the organic semiconductors using Moire potential distribution of graphene surface on metal substrate. Special stress was put on the alkali-metal doping of molecular layers on graphene. In the limited period of this study, we achieved two main subjects; (1) detailed characterization of the Moire potential distribution of graphene and (2) structural and electronic characterization of the alkali-doped organic films.
(1) Using surface sensitive He atom scattering, we quantify the force constant of the graphene-substrate bonding interms of the Debye temperature and clarify the in-plane distribution of the force constant which is quite relevant in the formation of the Moire-potetial distribution.
(2) The structural detail of the K-doped monolayer of picene and coronene were studied in the molecular scale using STM. We clarify the presence of the alkali-induced reordering of the organic layer, which is in close relation to the electronic structre.

Free Research Field

表面科学