2013 Fiscal Year Final Research Report
Studying and controlling photoluminescence blinking of quantum dots by using intense THz pulses
| Project/Area Number |
24760042
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Applied optics/Quantum optical engineering
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| Research Institution | Kyoto University |
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Principal Investigator |
HIRORI Hideki 京都大学, 物質-細胞統合システム拠点, 准教授 (00512469)
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| Project Period (FY) |
2012-04-01 – 2014-03-31
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| Keywords | THz分光 / 非線形分光 / 高強度THz発生 / 半導体光物性 / 量子井戸 / 量子ドット |
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| Research Abstract |
The purpose of this study is studying and controlling the photoluminescence phenomena of quantum dots or wells, which has expected for the applications of electro-optic devices. The excitation density dependence of photoluminescence (PL) blinking of single CdSe/ZnS quantum dots indicates that the biexciton generation is a precursor of the trion state and not of the OFF state. Also, the THz electric field dependence and the relaxation dynamics of the PL flash intensity of GaAs quantum wells suggest that the strong electric field of the THz pulse ionizes impurity states during the one-picosecond period of the THz pulse and release carriers from a giant reservoir containing impurity states in the AlGaAs layers.
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[Journal Article] Biexciton state causes photoluminescence fluctuations in CdSe/ZnS core/shell quantum dots at high photoexcitation densities2013
Author(s)
N. Yoshikawa, H. Hirori, H. Watanabe, T. Aoki, T. Ihara, R. Kusuda, C. Wolpert, T. K. Fujiwara, A. Kusumi, Y. Kanemitsu, and K. Tanaka
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Journal Title
Physical Review B
Volume: 88巻
Pages: 155440-1-155440-5
Peer Reviewed
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