2014 Fiscal Year Final Research Report
Direct bonding of semiconductor material and glass by ultra-short pulsed laser
| Project/Area Number |
24760107
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Production engineering/Processing studies
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| Research Institution | Okayama University |
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Principal Investigator |
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| Project Period (FY) |
2012-04-01 – 2015-03-31
|
| Keywords | 超短パルスレーザ / シリコン / ガラス / 微細溶接 / 機械強度 / 接合 / せん断強度 / 半導体材料 |
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| Outline of Final Research Achievements |
Locally selective welding method of monocrystalline silicon and glass was experimentally investigated. Laser beam was mainly absorbed at monocrystalline silicon through glass plate. It was considered that the absorption of laser energy to glass was occurred, and the convection of silicon and glass was caused by the pressure of high temperature. Strong weld joints could be created by mixture of silicon and glass at the interface, and higher shearing strength of weld joint could be performed at proper number of laser shot in the laser spot.
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| Free Research Field |
特殊加工
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