Development of polishing method for next-generation opt-electronic materials producing atomically-smooth surfaces

2014 Fiscal Year Final Research Report

• Project/Area Number: 24760110
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Production engineering/Processing studies
• Research Institution: Kinki University (2014); Ritsumeikan University (2012-2013)
• Principal Investigator: MURATA Junji 近畿大学, 理工学部, 講師 (70531474)
• Research Collaborator: HATTORI Azusa 大阪大学, 産業科学研究所, 助教
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: 窒化ガリウム / 研磨加工 / 触媒 / エッチング

Outline of Final Research Achievements

In this research, a novel abrasive-free polishing process for GaN surface utilizing a chemical etching with catalyst has been developed to obtain damage-free and super-smooth GaN surfaces with a high removal efficiency. Atomically-smooth surface can be achieved over an entire wafer (2 inch in diameter) surface by the proposed method. The polishing duration to obtain a flat GaN surface were reduced from several tens of hours to approximately 60 min compared with a conventional polishing method. The processed GaN surface showed a superior crystallographic, luminescence and electrical properties to that processed by a mechanical polishing.

Free Research Field

精密加工学