2014 Fiscal Year Final Research Report
Development of polishing method for next-generation opt-electronic materials producing atomically-smooth surfaces
Project/Area Number |
24760110
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Research Category |
Grant-in-Aid for Young Scientists (B)
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Allocation Type | Multi-year Fund |
Research Field |
Production engineering/Processing studies
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Research Institution | Kinki University (2014) Ritsumeikan University (2012-2013) |
Principal Investigator |
MURATA Junji 近畿大学, 理工学部, 講師 (70531474)
|
Research Collaborator |
HATTORI Azusa 大阪大学, 産業科学研究所, 助教
|
Project Period (FY) |
2012-04-01 – 2015-03-31
|
Keywords | 窒化ガリウム / 研磨加工 / 触媒 / エッチング |
Outline of Final Research Achievements |
In this research, a novel abrasive-free polishing process for GaN surface utilizing a chemical etching with catalyst has been developed to obtain damage-free and super-smooth GaN surfaces with a high removal efficiency. Atomically-smooth surface can be achieved over an entire wafer (2 inch in diameter) surface by the proposed method. The polishing duration to obtain a flat GaN surface were reduced from several tens of hours to approximately 60 min compared with a conventional polishing method. The processed GaN surface showed a superior crystallographic, luminescence and electrical properties to that processed by a mechanical polishing.
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Free Research Field |
精密加工学
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