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2013 Fiscal Year Final Research Report

Interaction of coimplanted heterogeneous dopants in semiconductor materials investigated using three-dimensional atom probe

Research Project

  • PDF
Project/Area Number 24760246
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeMulti-year Fund
Research Field Electronic materials/Electric materials
Research InstitutionTohoku University

Principal Investigator

SHIMIZU Yasuo  東北大学, 金属材料研究所, 助教 (40581963)

Project Period (FY) 2012-04-01 – 2014-03-31
Keywords電子・電気材料 / ナノ材料 / 3次元アトムプローブ / 複合クラスター / 同位体
Research Abstract

Coimplantation of heterogeneous dopants into semiconductors for shallow junction formation has recently been attracting much attention for realizing continuous shrinkage of large-scale integration. In this study, the behavior of coimplanted carbon and boron atoms in silicon substrates is investigated. The carbon-boron coclusters formed by annealing were directly observed by three-dimensional atom probe. In combination with carrier concentration profiles obtained by spreading resistance measurements, it is found that the carbon coimplantation leads to the decrease of boron electrical activation, whereas boron diffusion is suppressed by the presence of carbon atoms. For calibrating the three-dimensional reconstructed images obtained by the atom probe, isotopic multilayer samples fabricated via atomic-layer deposition were employed.

  • Research Products

    (10 results)

All 2014 2013 2012 Other

All Journal Article (3 results) (of which Peer Reviewed: 3 results) Presentation (5 results) (of which Invited: 2 results) Book (1 results) Remarks (1 results)

  • [Journal Article] Behavior of phosphorous and contaminants from monolayer doping combined with a conventional spike annealing method2014

    • Author(s)
      Y. Shimizu, H. Takamizawa, K. Inoue, F. Yano, Y. Nagai, L. Lamagna, G. Mazzeo, M. Perego, and E. Prati
    • Journal Title

      Nanoscale

      Volume: Vol. 6, Issue 2 Pages: 706–710

    • DOI

      10.1039/C3NR03605G

    • Peer Reviewed
  • [Journal Article] 3次元アトムプローブによる半導体ナノ構造の元素分布解析2013

    • Author(s)
      清水康雄、井上耕治、高見澤悠、矢野史子、永井康介
    • Journal Title

      日本真空学会機関誌真空[解説]

      Volume: 第56巻、第9号 Pages: 340–347

    • DOI

      10.3131/jvsj2.56.340

    • Peer Reviewed
  • [Journal Article] Atomic-scale characterization of germanium isotopic multilayers by atom probe tomography2013

    • Author(s)
      Y. Shimizu, H. Takamizawa, Y. Kawamura, M. Uematsu, T. Toyama, K. Inoue, E. E. Haller, K. M. Itoh, and Y. Nagai
    • Journal Title

      Journal of Applied Physics

      Volume: Vol. 113, Issue 2 Pages: 026101

    • DOI

      10.1063/1.4773675

    • Peer Reviewed
  • [Presentation] 3次元アトムプローブ法を用いた分子ドーピング形成によるシリコン表面上のリンと不純物原子の挙動評価2014

    • Author(s)
      清水康雄、高見澤悠、井上耕治、矢野史子、永井康介、L. Lamagna、G. Mazzeo、M. Perego、E. Prati
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス
    • Year and Date
      2014-03-19
  • [Presentation] Elemental distribution analysis in semiconductor-based MOS devices with atom probe tomography2013

    • Author(s)
      Y. Shimizu, H. Takamizawa, K. Inoue, F. Yano, and Y. Nagai
    • Organizer
      JSAP-MRS Joint Symposia for 2013 JSAP Autumn Meeting
    • Place of Presentation
      Doshisha University (Kyoto)
    • Year and Date
      2013-09-17
    • Invited
  • [Presentation] Dopant analysis of semiconductor devices with atom probe tomography2013

    • Author(s)
      Y. Shimizu, H. Takamizawa, K. Inoue, F. Yano, and Y. Nagai
    • Organizer
      14th International Symposium on SIMS and Related Techniques Based on Ion-Solid Interactions at Seikei University
    • Place of Presentation
      Tokyo
    • Year and Date
      2013-04-25
    • Invited
  • [Presentation] シリコン中に共注入した炭素がホウ素活性化に与える影響2013

    • Author(s)
      清水康雄、高見澤悠、矢野史子、井上耕治、永井康介
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2013-03-27
  • [Presentation] Atom probe tomography of germanium isotopic multilayer structures2012

    • Author(s)
      Y. Shimizu, H. Takamizawa, Y. Kawamura, M. Uematsu, K. M. Itoh, E. E. Haller, T. Toyama, and Y. Nagai
    • Organizer
      2012 Materials Research Society Fall Meeting
    • Place of Presentation
      Boston, USA
    • Year and Date
      2012-11-26
  • [Book] 日本分析化学会編、試料分析講座半導体・電子材料分析, (第6章三次元アトムプローブ(APT)担当)2013

    • Author(s)
      朝山匡一郎、伊藤寛征、井上耕治、植田和弘、上殿明良、表和彦、小林慶規、齋藤正裕、笹川薫、清水康雄、末包高史、高野明雄、張利、永井康介、中村誠、福嶋球琳男、藤田高弥、藤村聖史、星野英樹、松下光英、山田隆、行嶋史郎
    • Total Pages
      71–92 (全328ページ)
    • Publisher
      丸善出版 (ISBN-13: 978-4621087008)
  • [Remarks]

    • URL

      http://wani.imr.tohoku.ac.jp/yshimizu.html

URL: 

Published: 2015-06-25  

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