2013 Fiscal Year Final Research Report
Intrinsic pinning in in-plane magnetized film
| Project/Area Number |
24760249
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tohoku University |
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Principal Investigator |
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| Project Period (FY) |
2012-04-01 – 2014-03-31
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| Keywords | 電流誘起磁壁移動 |
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| Research Abstract |
To determine the intrinsic pinning and extrinsic pinning dependences of threshold current for the current-induced domain wall motion in in-plane magnetized films, fabrication method of stacking structure and device structure was studied. I proposed a fabrication method of films realizing that the extrinsic pinning is weaker than the intrinsic pinning and device structure to prepare a domain wall in in-plane magnetized wire by using Oersted field. An in-plane magnetized wire having an Oersted field line to create a domain wall was fabricated.
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