2013 Fiscal Year Final Research Report
Development of fabrication technologies for III-nitride semiconductor air-gap polariton laser diodes
| Project/Area Number |
24760251
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | The University of Tokyo |
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Principal Investigator |
ARITA MUNETAKA 東京大学, ナノ量子情報エレクトロニクス研究機構, 特任准教授 (10596951)
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| Project Period (FY) |
2012-04-01 – 2014-03-31
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| Keywords | 窒化物半導体 / 微小共振器 / ナノ構造 / エッチング |
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| Research Abstract |
In this research project, a novel fabrication technology for III-nitride semiconductor nanostructures have been developed. The superiority of the new method was demonstrated by fabricating air-gap nitride microcavities. By utilizing the technology (thermal decomposition of GaN in H2/NH3 mixed gas), GaN can be selectively removed from GaN/AlGaN heterostructures leaving AlGaN thin films with air-gap layers. Fabricated air-gap vertical microcavities exhibited clear cavity modes with reasonably high Q factors even with a very small number of air/AlGaN distributed Bragg reflectors, which evidences the superiority of the newly developed method.
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