2013 Fiscal Year Final Research Report
Investigation of the conduction mechanism of the n-type CNTFETs by air-free environment and stabilization of their n-type conduction in the air
| Project/Area Number |
24760256
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tokyo Denki University (2013)
Nagoya University (2012) |
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Principal Investigator |
ISHII SATOSHI 東京電機大学, 理工学部, 助教 (90442730)
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| Project Period (FY) |
2012-04-01 – 2014-03-31
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| Keywords | カーボンナノチューブ電界効果型トランジスタ / 嫌気環境システム / 伝導型制御 / 金属被膜 / フレキシブルCNTTFT集積回路 |
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| Research Abstract |
It was clarified by using the air-free system that the origin of the instability of the n-type properties of the CNTTFTs with Al contacts in air was not due to the oxidation of the Al but due to the oxygen absorption on the device surfaces. The ambipolar CNTFETs with graphitic carbon contacts were changed to the n- and p-type devices by forming the metal overlayers with different work functions on the side surface of the CNT channel. The ring oscillator fabricated on the flexible plastic substrate by the transfer technique of CNT network using poly vinyl alcohol exhibited a delay time of 1.1 us/gate. In addition, the successful operation of the flexible CNTTFT medium-scale integrated circuits with 108 circuit elements was also confirmed.
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