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2013 Fiscal Year Final Research Report

Reconfigurable nanoscale circuit wiring using QD-ReRAM hybrid material system

Research Project

  • PDF
Project/Area Number 24760283
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeMulti-year Fund
Research Field Electron device/Electronic equipment
Research InstitutionSophia University

Principal Investigator

NAKAOKA Toshihiro  上智大学, 理工学部, 准教授 (20345143)

Project Period (FY) 2012-04-01 – 2014-03-31
Keywords抵抗変化メモリ / ナノギャップ電極 / 酸化アルミニウム
Research Abstract

We apply the nanogap and macrogap electrodes for a filament-type ReRAM (Resistance Random Access Memory) material, AlxO1-x, to study the switching mechanism, and to develop novel devices. We have observed unipolar and bipolar behaviors by just changing the separation of the electrodes. The study is very useful for controlling the resistance switching behaviors and revealing the mechanisms.

  • Research Products

    (6 results)

All 2013 2012 Other

All Journal Article (2 results) Presentation (3 results) Remarks (1 results)

  • [Journal Article] Nanogap Resistance Random Access Memory Based on Natural Aluminum Oxide2013

    • Author(s)
      Toru Miyabe and Toshihiro Nakaoka
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 52 Pages: 04CJ08

  • [Journal Article] First-sharp diffraction peaks in amorphous GeTe and Ge2Sb2Te5 films prepared by vacuum-thermal deposition2012

    • Author(s)
      Toshihiro Nakaoka, Hiroki Satoh, Saori Honjo, and Hideo Takeuchi
    • Journal Title

      AIP Advances

      Volume: 2 Pages: 042189

  • [Presentation] Nanogap ReRAM Based on Natural Aluminum Oxide2012

    • Author(s)
      T. Miyabe and T. Nakaoka
    • Organizer
      44th International Conference ,on Solid State Devices and Materials (SSDM 2012)
    • Place of Presentation
      Kyoto, Japan(PS-9-7)
    • Year and Date
      20120925-27
  • [Presentation] アルミニウム自然酸化膜を用いたナノギャップReRAM2012

    • Author(s)
      宮邉徹,中岡俊裕
    • Organizer
      2012年秋季第73回応用物理学会学術講演会
    • Place of Presentation
      松山大学(2p-C13 - 1)
    • Year and Date
      20120000
  • [Presentation] Good Stoichiometry Achieved by Simple Vacuum-thermal Deposition of GeTe and Ge2Sb2Te5 Thin Films2012

    • Author(s)
      Hiroki Satoh, Toshihiro Nakaoka
    • Organizer
      Fifth International Conference on Optical, Optoelectronic and Photonic Materials and Applications (ICOOPMA 12)
    • Year and Date
      2012-06-06
  • [Remarks]

    • URL

      http://pweb.sophia.ac.jp/nakaoka/

URL: 

Published: 2015-06-25  

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