2013 Fiscal Year Final Research Report
Study of development of Heusler-type functional materials for high performance thermoelectric thin films
Project/Area Number |
24760536
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Research Category |
Grant-in-Aid for Young Scientists (B)
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Allocation Type | Multi-year Fund |
Research Field |
Physical properties of metals
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Research Institution | Nagoya Institute of Technology |
Principal Investigator |
MIYAZAKI HIDETOSHI 名古屋工業大学, 工学(系)研究科(研究院), 助教 (10548960)
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Project Period (FY) |
2012-04-01 – 2014-03-31
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Keywords | 熱電材料 / 電子構造 / 薄膜 |
Research Abstract |
For the application of thermoelectric materials to power generation, it is desirable to shift the peak temperature of the thermoelectric power factor up to, e.g., 600 K and above. The disadvantages of Fe2VAl-based thermoelectric materials are a peak temperature of the thermoelectric power factor of <400 K and a high thermal conductivity value. To improve the thermoelectric properties of the Fe2VAl-based alloys, the aims of my five-year research project were to explore new doping and substitution elements, and clarify the mechanism by which their thermoelectric properties are improved. The results are:1) Improvement of the thermoelectric properties of the Heusler Fe2VAl alloys due to the fabrication of the off-stoichiometric type Fe2V1+xAl1-x and fourth-element doping type Fe2VAl1-yTay alloys. 2) Clarification of the improvement of the thermoelectric properties of the Heusler Fe2VAl alloys. 3) Development of a thin- film deposition system for the fabrication of Fe2VAl thin films.
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Research Products
(12 results)
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[Journal Article] Atomic and electronicStructure of ultrathin Bi(111) films grown on Bi_2Te_3 substrates : Evidence for a strain-induced topological phase transition2012
Author(s)
T. Hirahara, N. Fukui, T. Shinohara, M. Yamada, M. Aitani, H. Miyazaki, M. Matsunami, S. Kimura, T. Takahashi, S. Hasegawa, and K. Kobayashi
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Journal Title
Physical Review Letters
Volume: 109
DOI
Peer Reviewed
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