Development of novel functionalities using phase copetitions in correlated-electron-oxide heterostructures

2013 Fiscal Year Final Research Report

• Project/Area Number: 24760557
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Inorganic materials/Physical properties
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: YAMADA Hiroyuyki 独立行政法人産業技術総合研究所, 電子光技術研究部門, 主任研究員 (00415762)
• Project Period (FY): 2012-04-01 – 2014-03-31
• Keywords: 強相関酸化物 / モット転移 / 強誘電体 / 電界効果 / 界面 / ヘテロ接合

Research Abstract

We developed non-volatile device functionalities by combining ferroelectricity with Mott transition, which occurs in correlated-electron oxides by novel mechanisms that cannot be expected in conventional semiconductors. Particularly, we found a nonvolatile resistive switching in a transistor structure consisting of a novel correlated oxide with a Mott transition and a newly-found ferroelectric. The observed switching (ferroelectric field effect) was the largest among this compound family. We revealed the mechanism by focusing on an interface atomic structure between the correlated oxide and ferroelectric.

Research Products

• [Journal Article] Resistive switching characteristics in dielectric/ferroelectric composite devices improved by post-thermal annealing at relatively low temperature (2014)
  • Author(s): A. Tsurumaki-Fukuchi、H. Yamada、A. Sawa
  • Journal Title: Appl. Phys. Lett. Volume: 104 Pages: 092903
  • DOI: 10.1063/1.4867260
  • Peer Reviewed
• [Journal Article] Magnetic and electronic properties of (LaMnO_3)_5(SrMnO_3)_5 superlattice (2014)
  • Author(s): M. Kubota, H. Yamada, H. Nakao, J. Okamoto, Y. Yamasaki, A. Sawa, Y. Murakami
  • Journal Title: Jpn. J. Appl. Phys. Volume: 53 Pages: 05FH7
  • DOI: 10.7567/JJAP.53.05FH07
  • Peer Reviewed
• [Journal Article] Neutron magnetic scattering study in manganite thin film system (2014)
  • Author(s): H. Nakao、H. Yamada、K. Iwasa, A. Sawa, T. Sudayama, J. Okamoto, Y. Yamasaki, Y. Murakami
  • Journal Title: Solid State Commun Volume: 185 Pages: 18-20
  • DOI: 10.1016/j.ssc.2014.01.019
  • Peer Reviewed
• [Journal Article] Ferroelectric control of a Mott insulator (2013)
  • Author(s): H. Yamada、M. Marinova, P. Altuntas, A. Crassous, L. Begon-Lours, S. Fusil, E. Jacquet, V. Garcia, K. Bouzehoudane, A. Gloter, J.E. Villegas, A. Barthelemy, M. Bibes
  • Journal Title: Scientific Reports Volume: 3 Pages: 2834
  • DOI: 10.1038/srep02834
  • Peer Reviewed
• [Journal Article] Resistive switching artificially induced in a dielectric/ferroelectric composite diode (2013)
  • Author(s): A. Tsurumaki-Fukuchi、H. Yamada、A. Sawa
  • Journal Title: Appl. Phys. Lett. Volume: 103 Pages: 152903
  • DOI: 10.1063/1.4824214
  • Peer Reviewed
• [Journal Article] Electrolyte-Gated SmCoO_3 Thin-Film Transistors Exhibiting Thickness- Dependent Large Switching Ratio at Room Temperature (2013)
  • Author(s): P. H. Xiang , S. Asanuma, H. Yamada, H. Sato、I.H. Inoue、H. Akoh、A. Sawa、M. Kawasaki, Y. Iwasa
  • Journal Title: Advanced Materials Volume: 25 Pages: 2158-2161
  • DOI: 10.1002/adma.201204505
  • Peer Reviewed
• [Journal Article] Phase diagram of strained Ca_<1-x>Ce_xMnO3 films (2012)
  • Author(s): P.-H. Xiang, H. Yamada, A. Sawa
  • Journal Title: J. Appl. Phys. Volume: 112 Pages: 113703
  • DOI: 10.1063/1.4768198.
  • Peer Reviewed
• [Presentation] 強誘電トンネル接合における抵抗スイッチング現象 (2014)
  • Author(s): 山田浩之
  • Organizer: 新世代研究所(ATI)・界面ナノ科学研究会
  • Place of Presentation: 愛知県蒲郡市
  • Year and Date: 2014-04-11
  • Invited
• [Presentation] 金属/BaTiO_3/酸化物トンネル接合における強誘電抵抗スイッチング (2014)
  • Author(s): 山田浩之、福地厚、豊崎喜精、石橋章司、澤彰仁、小林正起、中尾裕則、堀場弘司、組頭広志
  • Organizer: 応用物理学会
  • Place of Presentation: 青山学院大学(神奈川県相模原市)
  • Year and Date: 2014-03-19
• [Presentation] Resistive Switching in Ferroelectric Tunnel Junctions (2014)
  • Author(s): H. Yamada
  • Organizer: China-Japan-Korea workshop on RRAM and Functional Oxide Workship , Institute of Micro-Electronics, Chinese Academy of Science (CAS)
  • Place of Presentation: Beijing, China(invited)
  • Year and Date: 2014-01-16
• [Presentation] Pt/BaTiO_3/SrRuO_3強誘電トンネル接合の作製と評価 (2013)
  • Author(s): 山田浩之、福地厚、豊崎喜精、澤彰仁
  • Organizer: 応用物理学会
  • Place of Presentation: 同志社大学(京都府京田辺市)
  • Year and Date: 2013-09-19
• [Presentation] 擬正方晶BiFeO_3/CaMnO_3ヘテロ接合における強誘電電界効果 (2013)
  • Author(s): 山田浩之, P. Altuntas, A. Crassous, E. Jacquet, J.E. Villegas, K. Bouzehouane, M. Bibes, A. Barthélémy
  • Organizer: 応用物理学会
  • Place of Presentation: 神奈川工科大(神奈川県厚木市)
  • Year and Date: 2013-03-27
• [Presentation] Ferroelectric Field Effect in Supertetragonal BiFeO_3/CaMnO_3 Heterostructure (2012)
  • Author(s): H. Yamada, P. Altuntas, A. Crassous, E. Jacquet, J.E. Villegas, K. Bouzehouane, M. Bibes, A. Barthélémy、M. Marinova, A. Gloter, K. March, O. Stephan
  • Organizer: The 19^<th> international workshop on oxide electronics
  • Place of Presentation: Aperdoorn, the Netherlands
  • Year and Date: 2012-10-02
• [Presentation] Ferroelectric Tunnel Junction Based on Supertetragonal BiFeO_3 (2012)
  • Author(s): H. Yamada, V. Garcia, S. Fusil, E. Jacquet, K. Bouzehouane, M. Bibes, A. Barthélémy
  • Organizer: The 19^<th> international workshop on oxide electronics
  • Place of Presentation: Aperdoorn, the Netherlands
  • Year and Date: 2012-10-01
• [Presentation] Impacts of changing in interfacial band structures on ferroelectric resistive switching effect at Schottky-like BiFeO_3 interfaces (2012)
  • Author(s): A. Tsurumaki-Fukuchi, H. Yamada, A. Sawa
  • Organizer: The 19^<th> international workshop on oxide electronics
  • Place of Presentation: Aperdoorn, the Netherlands
  • Year and Date: 2012-10-01
• [Presentation] BiFeO_3薄膜を用いた強誘電抵抗変化メモリの動作特性 (2012)
  • Author(s): 福地厚、山田浩之、澤彰仁
  • Organizer: 応用物理学会
  • Place of Presentation: 愛媛大(愛媛県松山市)
  • Year and Date: 2012-09-12
• [Presentation] 擬正方晶BiFeO_3/Ca_<1-x>Ce_xMnO_3/ /YAlO_3ヘテロ接合の作製とその不揮発デバイス機能 (2012)
  • Author(s): H. Yamada, V. Garcia, S.Fusil, E. Jacquet, K. Bouzehouane, M. Bibes , A. Barthélémy
  • Organizer: 応用物理学会
  • Place of Presentation: 愛媛大(愛媛県松山市)
  • Year and Date: 2012-09-11
• [Presentation] BiFeO3強誘電抵抗変化メモリにおける界面電子構造に基づいた動作特性の制御 (2012)
  • Author(s): 福地厚、山田浩之、澤彰仁
  • Organizer: 応用物理学会
  • Place of Presentation: 神奈川工科大(神奈川県厚木市)
  • Year and Date: 2012-03-27