2013 Fiscal Year Final Research Report
Detection of spin polarization in supercurrent using quantum devices
Project/Area Number |
24840014
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Research Category |
Grant-in-Aid for Research Activity Start-up
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Allocation Type | Single-year Grants |
Research Field |
Condensed matter physics II
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Research Institution | The University of Tokyo |
Principal Investigator |
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Project Period (FY) |
2012-08-31 – 2014-03-31
|
Keywords | 超伝導接合 / 近接効果 / アンドレーエフ反射 / スピン軌道相互作用 / スピンホール効果 / スピン流 / スピントロニクス / 希薄磁性半導体 |
Research Abstract |
Superconducting junctions with InAs two-dimensional electron gas were fabricated using new techniques in order to obtain low barrier interface. We could observe Andreev reflection and supercurrent on several junctions at low temperature. In order to control the transport properties of the superconducting junctions, superconducting electrodes are attached to the InAs wire configuring cross structures. In such structures, we succeeded in controlling the Andreev reflection, Andreev bound states, and supercurrent by applying charge currents and spin currents to the intersection. Furthermore, we made a hybrid structure of superconducting junction and quantum point contact and grow dilute magnetic semiconductor InFeAs were grown up by molecular beam epitaxy, in order to change the pairing symmetry of the spins of proximity-induced Cooper pairs.
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