2013 Fiscal Year Final Research Report
Elucidation and control of the mechanism of magnetism in magnetic semiconductors with the high Curie temperature
| Project/Area Number |
24860014
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| Research Category |
Grant-in-Aid for Research Activity Start-up
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied physics, general
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| Research Institution | University of Tsukuba |
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Principal Investigator |
AKIYAMA Ryota 筑波大学, 数理物質系, 助教 (40633962)
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| Project Period (FY) |
2012-08-31 – 2014-03-31
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| Keywords | ゲート素子 / スピントロニクス / 電界効果 / 磁性 / イオン液体 / 強磁性 |
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| Research Abstract |
In this theme, we aimed to develop the spin-device showing low consumption of energy and enabling high speed and large capacity information processing using magnetic semiconductors with high Curie temperature. The magnetism in the device can be controlled by applying gate voltages. Before (Zn,Cr)Te, we successfully modulated the magnetism (magnitude of the magnetization) in Cr1-xTe whose magnetization shows the distinct curve by making gating devices using an ion liquid. Applying that method to (Zn,Cr)Te, we successfully modulated the magnetism in (Zn,Cr)Te, especially coercivity by gate voltages. These results led the clues of the magnetism in (Zn,Cr)Te.
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