Development of graphene NEMS hybrid functional devices for autonomous and ultrasensitive integrated sensors

2017 Fiscal Year Final Research Report

• Project/Area Number: 25220904
• Research Category: Grant-in-Aid for Scientific Research (S)
• Allocation Type: Single-year Grants
• Research Field: Electron device/Electronic equipment
• Research Institution: Japan Advanced Institute of Science and Technology
• Principal Investigator: MIZUTA HIROSHI 北陸先端科学技術大学院大学, 先端科学技術研究科, 教授 (90372458)
• Co-Investigator(Renkei-kenkyūsha): MURUGANATHAN Manoharan 北陸先端科学技術大学院大学, 先端科学技術研究科, 講師 (20639322)
• Research Collaborator: SUN Jian 北陸先端科学技術大学院大学, 先端科学技術研究科, 博士研究員 ; HUYNH Van Ngoc 北陸先端科学技術大学院大学, 先端科学技術研究科, 博士研究員 ; SCHMIDT Edward Marek 北陸先端科学技術大学院大学, 先端科学技術研究科, 博士研究員 ; CHONG Harold サザンンプトン大学, 物理科学工学部, 准教授 ; TSUCHIYA Yoshishige サザンプトン大学, 物理科学工学部, 講師
• Project Period (FY): 2013-05-31 – 2018-03-31
• Keywords: グラフェン / NEMS / センサ / スイッチ / 単分子検出 / ゼプトグラム / サブサーマルスイッチング

Outline of Final Research Achievements

We built graphene nano-electro-mechanical-system (GNEMS) fabrication technology along with atom-scale simulation and succeeded to develop a GNEMS sensor which enables high-speed and room temperature detection of electrical resistance change caused by a single CO2 molecule physisorbed on graphene as well as a GNEMS sensor which detects zeptogram (10E-21 g) level mass change due to molecular adsorption. We also developed a novel GNEMS switch successfully and demonstrated low-voltage (～1 V) sub-thermal switching with the subthreshold slope ～10 mV/dec and downscaling of device dimensions simultaneously, which are hardly achievable with conventional MEMS technology.

Free Research Field

ナノエレクトロニクス、NEMS