2015 Fiscal Year Final Research Report
Development of near-infrared germanium laser operating at room temperature using electron injection into the direct-gap valley.
Project/Area Number |
25246021
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Research Category |
Grant-in-Aid for Scientific Research (A)
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Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Crystal engineering
|
Research Institution | The University of Tokyo |
Principal Investigator |
FUKATSU Susumu 東京大学, 総合文化研究科, 教授 (60199164)
|
Co-Investigator(Kenkyū-buntansha) |
YASUTAKE Yuhsuke 東京大学, 総合文化研究科, 助教 (10526726)
|
Project Period (FY) |
2013-04-01 – 2016-03-31
|
Keywords | ゲルマニウム / レーザー / 直接遷移 / 電子制御バレートロニクス / 量子カスケード類似構造 / 熱い電子 / バレー間ファノン散乱 / 直接バレー電子注入 |
Outline of Final Research Achievements |
Germanium (Ge) is the frontrunner in pursuit of integrating and/or hybridizing the photonic/electronic functionalities on one chip. This is due to the fact that its direct-band-gap emission covers the telecommunication wavelengths besides the compatibility with silicon processing and inherent high carrier mobility. An attempt was made to create a new class of near-infrared interband lasers operating at room temperature using such direct-band-gap emission of Ge. We aimed at defeating the otherwise intractable indirect-gap nature of Ge through the development of a viable valleytronic technique that allows efficient electron injection to the direct conduction-band-valley with an applied field. A deeper physical insight was gained into some of the Ge-specific properties such as hot electrons, intervalley coupling and its impact on the room-temperature Landau splitting, and resonant electronic Raman scattering, which likely make inroads into a new realm leading to novel group-IV lasers.
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Free Research Field |
応用物理学
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