2017 Fiscal Year Final Research Report
Study on nanochemistry in latest nanofabrication materials using quantum beams
| Project/Area Number |
25246036
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Quantum beam science
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| Research Institution | Osaka University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
山本 洋揮 大阪大学, 産業科学研究所, 助教 (00516958)
小林 一雄 大阪大学, 産業科学研究所, 助教 (30116032)
室屋 裕佐 大阪大学, 産業科学研究所, 准教授 (40334320)
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| Project Period (FY) |
2013-04-01 – 2018-03-31
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| Keywords | 放射線、X線、粒子線 / 半導体超微細化 / シミュレーション工学 / 計算物理 |
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| Outline of Final Research Achievements |
In the lithography, the development of resist materials has been proceeded to realize the high-volume production of semiconductor devices with 11 nm resolution and beyond. In addition to the improvement of sensitivity, it is required for the resist materials to suppress the sidewall roughness of resist patterns (line edge roughness). In this study, the resist material design for <11 nm resolution fabrication was obtained by the analysis of chemical reactions induced in the nanoscale space through (i) the conversion of the time-dependent behavior of intermediates to their temporal changes of the spatial distribution, (ii) the estimation of the temporal change of the spatial distribution of intermediates using the measurement of the pattern shapes after chemical reactions, (iii) the measurement of spur overlap ( the analysis of the overlap of time and space), and (iv) the development of simulation code and the analysis.
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| Free Research Field |
応用ビーム工学
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