Study of carrier scattering mechanisms by Ge isotope and interface roughness in Ge thin films

2015 Fiscal Year Final Research Report

• Project/Area Number: 25249032
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: The University of Tokyo
• Principal Investigator: Toriumi Akira 東京大学, 工学(系)研究科(研究院), 教授 (50323530)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: 電子デバイス / 半導体物性 / ゲルマニウム / 同位体 / 界面散乱

Outline of Final Research Achievements

By annealing Ge substrate in H2, we have achieved atomically flat Ge surface. As a result, the electron mobility at high electron density has been significantly improved. On the other hand, concerning the Ge isotope effects, we have unfortunately not succeeded in homo-epitaxial growth of 74Ge on Ge substrate. However, we found rather important results that oxygen-related defects in Ge affected the electron peak mobility and they could be annihilated by H2 annealing. Both new findings surely explore Ge CMOS future.

Free Research Field

材料科学的観点に基づいた新材料電子デバイスの開発とデバイス物理の研究