High-quality and Low-resistant SiC crystal

2016 Fiscal Year Final Research Report

• Project/Area Number: 25249034
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Nagoya University
• Principal Investigator: Kamei Kazuhito 名古屋大学, 未来社会創造機構, 招へい教員 (10527576)
• Co-Investigator(Kenkyū-buntansha): 原田 俊太 名古屋大学, 未来材料・システム研究所, 助教 (30612460) ; 宇治原 徹 名古屋大学, 未来材料・システム研究所, 教授 (60312641) ; 加藤 正史 名古屋工業大学, 工学(系)研究科(研究院), 准教授 (80362317)
• Project Period (FY): 2013-04-01 – 2017-03-31
• Keywords: 結晶成長 / ドーピング

Outline of Final Research Achievements

SiC is expected to be a semiconductor material for next-generation power devices. Reducing a electrical loss, it is necessary to decrease the electrical resistivity of semiconductor materials. In SiC, a doping impurities are nitrogen for n-type and aluminum for p-type. However, highly doping in SiC induces stacking faults. In this study, we developed the doping control in SiC solution growth which is a good method for high-quality SiC crystal. We estimated a modulate doping concentration avoiding the induction stacking faults. And, we made clear the mechanism of doping of nitrogen.

Free Research Field

結晶工学