2015 Fiscal Year Final Research Report
Low dislocation diamond wafer for power device
| Project/Area Number |
25249036
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kwansei Gakuin University (2015)
National Institute of Advanced Industrial Science and Technology |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
TOUGE Mutsumi 熊本大学, 先進マグネシウム国際研究センター, 教授 (00107731)
CHAYAHARA Akiyosshi 国立研究開発法人産業技術総合研究所, 先進パワーエレクトロニクスセンター, 上級主任研究員 (10357501)
MOKUNO Yoshiaki 国立研究開発法人産業技術総合研究所, 先進パワーエレクトロニクスセンター, チーム長 (60358166)
UMEZAWA Hitoshi 国立研究開発法人産業技術総合研究所, 先進パワーエレクトロニクスセンター, 主任研究員 (80329135)
KATOU Yukako 国立研究開発法人産業技術総合研究所, 先進パワーエレクトロニクスセンター, 主任研究員 (90509837)
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| Project Period (FY) |
2013-05-31 – 2016-03-31
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| Keywords | 省エネルギー / パワーデバイス / ダイヤモンド |
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| Outline of Final Research Achievements |
Low dislocation density CVD diamond wafer has been studied toward diamond power device application. The evaluation technique including X ray topography has been developed and applied to HPHT seed and CVD crystal. Using high quality seed crystal of low dislocation density less than 2000cm-2, high quality CVD crystal copying technology with low dislocation density up to 400cm-2 and low distortion of 2x10-5 has been developed associated with sophisticated UV assist polishing and dry etching techniques for the surface treatment prior to the CVD deposition.
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| Free Research Field |
結晶工学
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