Development of new diamond electron device using huge polarization charge

2016 Fiscal Year Final Research Report

• Project/Area Number: 25249054
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: National Institute for Materials Science
• Principal Investigator: Koide Yasuo 国立研究開発法人物質・材料研究機構, 技術開発・共用部門, 部門長/理事 (70195650)
• Co-Investigator(Kenkyū-buntansha): 廖 梅勇 国立研究開発法人物質・材料研究機構, 光・電子材料ユニットワイドバンドギャップ機能材料グループ, 主幹研究員 (70528950) ; 井村 将隆 国立研究開発法人物質・材料研究機構, 光・電子材料ユニットワイドバンドギャップ機能材料グループ, 主任研究員 (80465971)
• Co-Investigator(Renkei-kenkyūsha): TSUYA DAIJU 物質・材料研究機構, 技術開発・共用部門・ナノテクノロジー融合ステーション, 主任エンジニア (10469760)
• Project Period (FY): 2013-04-01 – 2017-03-31
• Keywords: ダイヤモンド / 電界効果トランジスタ / 酸化物 / 酸化物界面 / 微細構造解析 / ２次元正孔伝導 / 水素終端表面 / 論理回路

Outline of Final Research Achievements

The purpose this research was development of high-performance diamond field-effect transistor (FET) in order to use an advantage of high-density hole carriers in surface conductive layer. The logic circuit chip of diamond was successfully developed for the first time by developing processes to fabricate normally-on/off mode FETs and controlling the positive and negative charge density in the stack gate oxide. In addition, the excellent AlN/diamond heterojunciton FET with drain current same as those of the stack oxide gate FETs was developed by understanding the transport mechanism of p-type channel based on the microstructure analysis and the transfer doping model.

Free Research Field

材料工学、電子材料工学、ナノ加工学