Opening a transport gap in graphene induced by strain-induced gauge fields

2015 Fiscal Year Final Research Report

• Project/Area Number: 25286021
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Nanomaterials engineering
• Research Institution: University of Tsukuba
• Principal Investigator: KANDA Akinobu 筑波大学, 数理物質系, 准教授 (30281637)
• Co-Investigator(Renkei-kenkyūsha): AGO Hiroki 九州大学, 先導物質科学研究所, 准教授 (10356355) ; OOTUKA Youiti 筑波大学, 数理物質系, 教授 (50126009)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: ナノ材料 / グラフェン / 電界効果トランジスタ / 格子ひずみ

Outline of Final Research Achievements

Graphene, two dimensional crystal of carbon atoms, has a special property that conduction electrons feel (pseudo) vector potentials in graphene under lattice strain. Theories tell that tailored strain produces a transport gap, so that the strain engineering is attractive for the realization of high-performance graphene transistors. In this research, we have developed several techniques which allow us to investigate electron transport in graphene field effect devices with tailored strain. We have confirmed formation of transport gaps in graphene with two types of strain configurations, (1) uniaxial local strain and (2) periodic uniaxial strain (strain superlattice), for the first time.

Free Research Field

物性物理学