Deposition of Ideally-oriented PZT Monocrystalline Thin Film on Si Substrate and Feasibility Study of Its Application to MEMS

2015 Fiscal Year Final Research Report

• Project/Area Number: 25286033
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Nano/Microsystems
• Research Institution: Tohoku University
• Principal Investigator: Tanaka Shuji 東北大学, 工学(系)研究科(研究院), 教授 (00312611)
• Co-Investigator(Kenkyū-buntansha): YOSHIDA Shinya 東北大学, 大学院工学研究科, 特任准教授 (30509691)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: PZT / エピタキシャル成長 / 単結晶圧電薄膜 / 急冷法 / 誘電率 / MEMS

Outline of Final Research Achievements

In this study, PZT family monocrystalline thin films with the ideal orientation were epitaxially grown on a Si substrate. The deposition method is sputtering, and by a fast cooling method, the ideal polarization, i.e. c-axis polarization of tetragonal crystal, has been first realized on a Si substrate. As a result, we obtained excellent characteristics for applications such as high piezoelectric constant, low dielectric constant, very large figure of merit derived from them and Curie point significantly higher than that of the bulk. A metal buffer layer with low resistivity was also successfully deposited. In addition, MEMS structures were fabricated using the deposited PZT family monocrystalline thin films to confirm that they were free from process damages.

Free Research Field

MEMS