Innovative betterment of epitaxial graphene on Si substrate that accelerates realization of graphene electronics

2015 Fiscal Year Final Research Report

• Project/Area Number: 25286053
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Tohoku University
• Principal Investigator: Suemitsu Maki 東北大学, 電気通信研究所, 教授 (00134057)
• Co-Investigator(Kenkyū-buntansha): FUKIDOME Hirokazu 東北大学, 電気通信研究所, 准教授 (10342841) ; JIAO Sai 東北大学, 電気通信研究所, 教育研究支援者 (80710475)
• Co-Investigator(Renkei-kenkyūsha): NAGASAWA Hiroyuki 東北大学, 電気通信研究所, 産学官連携研究員 (60649367)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: 3C-SiC / ヘテロエピタキシ / グラフェン / 積層欠陥 / 転位

Outline of Final Research Achievements

In order to realize high-performance devices using the "graphene on silicon (GOS)" technology in which cubic 3C-SiC film is grown on Si substrates, the crystal defects that primarily limit the grain size have been reduced. First, the structure and the formation mechanism of the planar defects in 3C-SiC were revealed. Then, the defect density was estimated, by using a Monte-Carlo simulation, as a function of the epitaxial layer thickness. The result suggested a configuration of defects to minimize the surface defect density, whose validity was confirmed experimentally by executing the 3C-SiC epitaxially on Si substrate.

Free Research Field

半導体薄膜工学