Electron-spin-resonance study on SiC-MOSFETs and their MOS interface defects related to channel-mobility degradation

2015 Fiscal Year Final Research Report

• Project/Area Number: 25286054
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: University of Tsukuba
• Principal Investigator: Fujinoki Takahide (梅田享英) 筑波大学, 数理物質系, 准教授 (10361354)
• Co-Investigator(Kenkyū-buntansha): KOSUGI Ryouji 国立研究開発法人産業技術総合研究所, 先進パワーエレクトロニクス研究センター, 主任研究員 (10356991) ; OKAMOTO Mitsuo 国立研究開発法人産業技術総合研究所, 先進パワーエレクトロニクス研究センター, 主任研究員 (60450665) ; HARADA Shinsuke 国立研究開発法人産業技術総合研究所, 先進パワーエレクトロニクス研究センター, 研究チーム長 (20392649)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: パワーエレクトロニクス / 4H-SiC / MOSFET / 界面準位 / 電子スピン共鳴分光 / チャネル移動度 / 閾値変動

Outline of Final Research Achievements

We studied electrically-active defects in 4H-SiC MOSFETs (metal-oxide-semiconductor field-effect transistors) using electrically-detected magnetic resonance (EDMR) spectroscopy. The EDMR observations revealed that "channel doping" of nitrogen donors or phosphorous donors has a crucial role on the improvement of channel mobility in Si-face SiC-MOSFETs. On the other hand, in C-face SiC-MOSFETs, a different type of interface defect is dominantly formed, which we named "C-face defects." They have a crucial role on the threshold-voltage instability in C-face MOSFETs. The control of "channel doping" and "C-face defects" is key for commercializing high-performance and high-reliability SiC-MOSFETs.

Free Research Field

半導体物性