Work function modulation in the heterostructures of semiconducting and insulating oxides

2015 Fiscal Year Final Research Report

• Project/Area Number: 25286056
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: SUSAKI Tomofumi 東京工業大学, 応用セラミックス研究所, 准教授 (20332265)
• Co-Investigator(Kenkyū-buntansha): YANAGI Hiroshi 山梨大学, 大学院総合研究部, 教授 (30361794)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: 仕事関数 / 表面 / 界面 / 電子デバイス / 酸化物エレクトロニクス / 荷電欠陥 / 薄膜成長

Outline of Final Research Achievements

Work function plays a key role in any types of surface and interface functionalities which involve an electron transfer across the solid surface or interface. Surface work function is one of the most important parameters in catalytic functionalities and in efficient electron emitters. In addition, work function is fundamental to design diode junctions and metal-oxide-insulator (MOS) field-effect transistors (FETs). We have controlled work function in the form of heterostructures by using chemically stable oxides and nitrides. Specifically, by introducing charged defects in magnesium oxide thin films we have realized the work function as low as 2 eV.

Free Research Field

固体物理学