Development and Application of Bulk Sensitivity Controllable Atomic Structure Analysis Method by "Inverse Photoelectron Diffracion"

2016 Fiscal Year Final Research Report

• Project/Area Number: 25287075
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Condensed matter physics I
• Research Institution: Nara Institute of Science and Technology
• Principal Investigator: Fumihiko Matsui 奈良先端科学技術大学院大学, 物質創成科学研究科, 准教授 (60324977)
• Project Period (FY): 2013-04-01 – 2017-03-31
• Keywords: 光電子回折 / Auger電子回折 / 原子構造 / 放射光・軟X線 / 表面・界面 / 非弾性散乱過程

Outline of Final Research Achievements

We discovered a phenomenon called negative contrast photoelectron diffraction in the energy-loss electron angular distribution which appears irrespective of polarization and type (light / electron) of the excitation source. By measuring photoelectron diffraction and energy-loss electron diffraction patterns in various crystal samples, we systematically investigated the relation between negative contrast photoelectron diffraction effect and escape depth, and clarified the mechanism of this phenomenon. Furthermore, we established a background removal method. The local atomic structure around dilute dopant atoms has been investigated. We also devised a new compact display type analyzer that efficiently measures such diffraction patterns and filed a patent application.

Free Research Field

表面物性物理学