Depth-resolved analysis of electronic state and structure at the ferroelectric/ferromagnetic interface and the control of magnetism

2015 Fiscal Year Final Research Report

• Project/Area Number: 25287078
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Condensed matter physics I
• Research Institution: High Energy Accelerator Research Organization
• Principal Investigator: AMEMIYA Kenta 大学共同利用機関法人高エネルギー加速器研究機構, 物質構造科学研究所, 教授 (80313196)
• Co-Investigator(Kenkyū-buntansha): SAKAMAKI Masako 高エネルギー加速器研究機構, 物質構造科学研究所, 助教 (90598880)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: ferromagnetic material / ferroelectric material / depth-resolved analysis / interface / magnetic thin film

Outline of Final Research Achievements

Fluorescence-yield depth-resolved X-ray absorption spectroscopy (XAS) technique has been developed, in which a series of XAS data with different probing depths is obtained by collecting the fluorescent X ray at different angles, which is emitted after absorption of soft X ray, in order to observe depth-resolved information on the electronic state and structure at the ferroelectric/ferromagnetic interface.
By adopting the developed technique for the interface between ferroelectric BaTiO3 and ferromagnetic Fe, it has been revealed that Fe oxides exist at the interface, and that new electric-field effect is induced by intentionally inserting Fe oxides at the interface.

Free Research Field

Magnetic thin film