2015 Fiscal Year Final Research Report
Development of new organic spin devices exploiting currents from electron spin resonace and creation of their basic techniques
| Project/Area Number |
25288117
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Partial Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Device related chemistry
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| Research Institution | Osaka City University |
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Principal Investigator |
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Keywords | 電子スピン共鳴 / ESR / 変位電流 / 電流検出ESR / トラップ |
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| Outline of Final Research Achievements |
We recently found that a strong ESR-induced current is obtained by air-treating organic semiconductors. This research was dedicated to reveal the origin of the ESR-current effect and consider the method of applying the effect into new spin-based devices. It was revealed that this effect results from carriers in trapped sites inside organic diodes. This system was demonstrated to exhibit magneto-capacitance effects under photoexcitation, being the first result that was obtained from air-treated semiconductors. We further revealed that capacitance of this system varies by ESR. Although the proportion of change was just 0.14%, it is much larger than the previous value from other systems and the highest.
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| Free Research Field |
物性物理
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