Direct formation of the high-quality nanowire Si from metallurgical Si source based on the plasma and nanotechnology science

2015 Fiscal Year Final Research Report

• Project/Area Number: 25289016
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Production engineering/Processing studies
• Research Institution: Osaka University
• Principal Investigator: Ohmi Hiromasa 大阪大学, 工学(系)研究科(研究院), 助教 (00335382)
• Co-Investigator(Kenkyū-buntansha): YASUTAKE Kiyoshi 大阪大学, 大学院工学研究科, 教授 (80166503)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: ナノワイヤ / シリコン / 太陽電池 / プラズマ / 水素

Outline of Final Research Achievements

Toward the improvement of conversion efficiency and the reduction of production cost of solar cell, we have achieved the formation of nanowire Si (NW-Si) film by atmospheric pressure plasma enhanced chemical transport technique which can chemically prepare the Si film without toxic and dangerous source gases, such as SiH4. In particular, it was founded that the type of catalyst metal, the suppression of atomic hydrogen etching, and the optimization of Si precursor flux are required to prepare the NW-Si film in the high density hydrogen plasma. Furthermore, the formation of NW-Si film from metallurgical Si source was achieved by remote type plasma enhanced chemical transport technique.

Free Research Field

材料科学