Development on low dimensional thermoelectric thin films

2015 Fiscal Year Final Research Report

• Project/Area Number: 25289043
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Thermal engineering
• Research Institution: Kyushu Institute of Technology
• Principal Investigator: Miyazaki Koji 九州工業大学, 工学(系)研究科(研究院), 教授 (70315159)
• Co-Investigator(Kenkyū-buntansha): TAKASHIRI Masayuki 東海大学, 工学部, 准教授 (50631818) ; YABUKI Tomohide 九州工業大学, 大学院工学研究院, 助教 (70734143) ; TANAKA Saburo 日本大学, 工学部, 助教 (30713127)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: ナノマイクロ熱工学 / 低次元半導体 / 熱電変換

Outline of Final Research Achievements

Bismuth telluride thin films were made by using vacuum arc plasma deposition method. Bismuth telluride film with 10nm thickness was deposited on glass substrate heated at 200℃ during the deposition process. The thermoelectric properties of the films were measured, and the maximum Seebeck coefficient was 167 microW/K. The Seebeck coefficient was increased when the film thickness was decreased. However, the increase of the Seebeck coefficient can be explained well by classical carrier transport model. The measured ZT was only 0.5 at 300K. It was lower than the expected value of a low dimensional Bismuth telluride film. We demonstrated fabrication of nano-wire of Bismuth telluride by depositing the film on a nano-structured substrate. The Bismuth telluride nano-wire with 50nm diameter was fabricated successfully.

Free Research Field

熱工学