Crystal symmetry breaking of oxide quantum well interfaces and polarized light-electric conversions

2015 Fiscal Year Final Research Report

• Project/Area Number: 25289084
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: The University of Tokyo
• Principal Investigator: Matsui Hiroaki 東京大学, 工学(系)研究科(研究院), 講師 (80397752)
• Co-Investigator(Kenkyū-buntansha): HASUIKE Noriyuki 京都工芸繊維大学, 大学院工芸研究科, 助教 (40452370)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: 非極性 / ZnO / 偏光性 / 光電変換機能 / 紫外領域 / 格子歪 / 量子井戸

Outline of Final Research Achievements

In this work, we focus on an oxide semiconductor (nonpolar ZnO) with both semiconducting and dielectric characteristics, and realize a high optical anisotropy and a light-electric conversion based on polarization and electronic band control. We succeeded introduce anisotropic lattice strains in the samples on the basis of electronic band calculations derived from the k-p perturbation method, and obtained nonpolar ZnO thin films with high anisotropy in the in-plane optical transitions. In addition, we fabricated ZnO/MgxZn1-xO quantum wells that were introduced strong lattice strains at an interface between well and barrier layers. As a result, we realized high light-electric conversion of 15%, which contributes to applications for optical detection devices of light polarizations in the ultra-violet region.

Free Research Field

酸化物半導体工学