Fabrication of semipolar {20-2-1} plane GaN substrate grown from the sidewall of patterned sapphire substrate

2015 Fiscal Year Final Research Report

• Project/Area Number: 25289088
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Yamaguchi University
• Principal Investigator: Tadatomo Kazuyuki 山口大学, 理工学研究科, 教授 (10379927)
• Co-Investigator(Kenkyū-buntansha): YAMADA Youichi 山口大学, 大学院理工学研究科, 教授 (00251033) ; SAKAI Akira 大阪大学, 基礎工学研究科, 教授 (20314031) ; OKADA Narihito 山口大学, 大学院理工学研究科, 助教 (70510684)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: GaN / 半極性面 / MOVPE / HVPE / 転位 / サファイア基板

Outline of Final Research Achievements

In this study, we have focused on the research and development of the growth of free standing large sized semipolar {20-2-1} GaN substrate, which are promising for realizing high performance optical and power devices. A {20-21} GaN was grown from a c-plane-like sapphire sidewall of {22-43} patterned sapphire substrates (PSS) by metal-organic vapor phase epitaxy (MOVPE) and hydride vapor phase epitaxy (HVPE). On the other hand, a {20-2-1} GaN was grown from a nitrided c-plane-like sapphire sidewall of {22-43} PSS by MOVPE. However, the {20-2-1} GaN was not grown on the PSS with good reproducibility.
We demonstrated the thick growth of a {20-2-1} GaN on the back surface of {20-21} GaN substrate by HVPE. We found that the dark spot density in the {20-2-1} GaN layer decreased more rapidly than that in the {20-21} GaN layer as growth thickness increased.

Free Research Field

半導体工学